IEEE 2000 Custom Integrated Circuits Conference
Orlando, May 21 to 25, 2000
Advanced Compact Model for Short-Channel MOS Transistors
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Oscar C. Gouveia Filho
Universidade Federal do Paraná - Departamento de Engenharia
Elétrica
Caixa Postal 19011 - CEP 81531-970 Curitiba, Paraná, Brasil
E-mail: ogouveia@eletr.ufpr.br
Ana Isabela A. Cunha
Universidade Federal da Bahia - Departamento de Engenharia Elétrica
E-mail: aiac@ufba.br
Márcio C. Schneider
Universidade Federal de Santa Catarina - Departamento de Engenharia
Elétrica
Caixa Postal 5119 - CEP 88040-970 Florianópolis, Santa Catarina,
Brasil
E-Mail: marcio@eel.ufsc.br
Carlos Galup-Montoro
Universidade Federal de Santa Catarina - Departamento de Engenharia
Elétrica
Caixa Postal 5119 - CEP 88040-970 Florianópolis, Santa Catarina,
Brasil
E-Mail: carlos@eel.ufsc.br
Abstract
This paper introduces the advanced compact MOSFET (ACM) model, a physically
basedmodel of the MOS transistor, derived from the long-channel transistor
model presented in (1). The ACM model is composed of very simple expressions,
is valid for any inversion level, conserves charge and preserves the source-drain
symmetry of the transistor. Short-channel effects are includedusing a compact
and physical approach. The performance of the ACM model in benchmark tests
demonstrates its suitability for circuit simulation.