5th IEEE International Conference on Electronics, Circuits
and Systems
Lisbon, September 7 to 10, 1998
A Compact Charge-Based MOSFET Model for Circuit Simulation
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Oscar C. Gouveia Filho
Universidade Federal do Paraná - Departamento de Engenharia
Elétrica
Caixa Postal 19011 - CEP 81531-970 Curitiba, Paraná, Brasil
E-mail: ogouveia@eletr.ufpr.br
Ana Isabela A. Cunha
Universidade Federal da Bahia - Departamento de Engenharia Elétrica
E-mail: aiac@ufba.br
Márcio C. Schneider
Universidade Federal de Santa Catarina - Departamento de Engenharia
Elétrica
Caixa Postal 5119 - CEP 88040-970 Florianópolis, Santa Catarina,
Brasil
E-Mail: marcio@eel.ufsc.br
Carlos Galup-Montoro
Universidade Federal de Santa Catarina - Departamento de Engenharia
Elétrica
Caixa Postal 5119 - CEP 88040-970 Florianópolis, Santa Catarina,
Brasil
E-Mail: carlos@eel.ufsc.br
Abstract
This paper presents a physically based model of the MOS transistor suitable
for design and simulation of integrated circuits. The static and dynamic
characteristics of the MOSFET are accurately described by single-piece
functions of the inversion charge densities at source and drain. A new
compact and physical approach to short-channel effects is presented. We
have run some tests to compare the performances of our model and widely
used MOSFET models.